| PART |
Description |
Maker |
| MDS400 |
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 400; P(in) (W): 90; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
400 Watts Pk, 45 Volts, 32us, 2% Avionics 1030-1090 MHz
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
GHz Technology
|
| APL5546-AKAI-TRL |
Dual Channel 500mA/500mA Regulator Reset IC
|
Anpec Electronics Coropration
|
| APL5522KAC-TRG APL5522KC-TRG |
Dual-Channel, 3.3V/500mA and 2.5V/500mA Linear Regulator
|
Anpec Electronics Corop...
|
| 206-501-22-38 206-521-22-38 206-532-22-38 206-930- |
LED MINIATUR FLANSCHSOCKEL 24V GELB
LED MINIATUR FLANSCHSOCKEL 24V BLAU
LED MINIATUR FLANSCHSOCKEL 24V GRUEN 发光二极管微缩FLANSCHSOCKEL 24V的格
LED MINIATUR FLANSCHSOCKEL 24V ROT 发光二极管微缩FLANSCHSOCKEL 24V的腐
|
Marl International Limited
|
| AS1129 AS1129M3-5.0 |
500mA Low Dropout Voltage Regulator(500mA，低压差稳压
FIXED POSITIVE LDO REGULATOR, PSSO3
|
Sipex Corporation
|
| IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128K x 8 Ultra Low Power and Low VCC SRAM
From old datasheet system
55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| MAX6754UKLD0-T MAX6755UKLD0-T MAX6756UKLD0-T MAX67 |
Vcc: 5.0 V, active timeout period: 0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 5.0 V, active timeout period: 100 ms-320 ms, low-power, single/dual-voltage window detector
Vcc: 5.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 2.5 V, Vcc:1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, Vcc: 1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, Vcc:adj, active timeout period:185 ms, low-power single/dual-voltage window detector
|
MAXIM - Dallas Semiconductor
|
| BD15KA5FP-E2 BD15KA5WF-E2 BD15KA5WFP-E2 BDXXKA5W B |
500mA Variable/Fixed Output LDO Regulators Built-in thermal shutdown circuit
low-saturation regulators that are available for output currents up to 500mA.
|
Rohm
|
| CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| 6EP1434-2BA00 6EP1436-2BA00 6EP1437-2BA00 6EP1437- |
PSU 24V 40A DIN RAIL
PSU 24V 10A DIN RAIL 电源24V0A条导
10-Port Constant-Current LED Drivers and I/O Expanders with PWM Intensity Control 电源24V0A条导
|
HIROSE ELECTRIC Co., Ltd.
|
| 403CNQ080 |
400 Amp Schottky Rectifier(400 A 肖特基整流器) 400安培肖特基整流器00甲肖特基整流器）
|
International Rectifier, Corp.
|
